Chip-size, double side connection package and method for manufacturing the same

ABSTRACT

A low resistance metal is charged into holes formed in a semiconductor substrate to thereby form through electrodes. Post electrodes of a wiring-added post electrode component connected together by a support portion thereof are simultaneously fixed to and electrically connected to connection regions formed on an LSI chip. On the front face side, after resin sealing, the support portion is separated so as to expose front face wiring traces. On the back face side, the semiconductor substrate is grounded so as to expose tip ends of the through electrodes. The front face wiring traces exposed to the front face side and the tip ends of the through electrodes exposed to the back face side are used as wiring for external connection.

TECHNICAL FIELD

The present invention relates to a chip-size double side connectionpackage in which a semiconductor chip is connected to wiring forexternal connection provided on each of first and second main facesrespectively located above and blow the semiconductor chip, and to amethod for manufacturing the same.

BACKGROUND ART

A chip-size package (CSP) refers to an ultra small package whosesmallness and thinness are rendered close to those of an LSI chip to apossible degree. A wafer level chip size package (WLCSP) is known as anultra small package which is fabricated by means of connectingindividual LSIs of a wafer and corresponding electrodes and molding themwith resin before the wafer is diced into the individual LSIs(separation); i.e., an ultra small package fabricated through directpackaging on a wafer (see Non-patent Document 1). In Patent Document 1,a double side electrode package which enables different similar packagesto be disposed above and below the package in a stacked condition isdisclosed as such a wafer level chip size package.

FIG. 16 shows a conventional double side electrode package disclosed inPatent Document 1. A multilayer wiring section is formed on the frontface of a semiconductor substrate on which circuit elements are formed.In a stage of forming this multilayer wiring section, holes are formedin the semiconductor substrate, and through electrodes to be connectedto the multilayer wiring section are formed in the holes. A back faceinsulation layer is formed on the back face of the semiconductorsubstrate such that tip ends of the through electrodes are exposed.Furthermore, post electrodes are connected to the uppermost wiring layerof the multilayer wiring section, and the post electrodes are coveredwith a front face insulation layer.

Subsequently, on the front face side, bump electrodes are formed on thetip ends of the post electrodes exposed from the front face insulationlayer, and, on the back face side, bump electrodes are formed on the tipends of the through electrodes exposed from the back face insulationlayer.

In such a chip-size double side electrode package, both the upper andlower faces are covered with respective insulation layers. Thisconfiguration facilitates tests, and allows other packages havingsimilar structures to be freely combined and disposed above and belowthe chip-size double side electrode package. The area of a completeddouble side electrode package is small; i.e., completely equal to thatof the original chip. In addition, since mounting such a package on asubstrate is easy, the package is suitable for high density mounting.Because of this feature, employment of such a double side electrodepackage in products which is small in mounting space, such as cellularphones and digital cameras, has been spreading.

In general, a semiconductor manufacturing process is divided into aformer stage for fabricating an LSI and a latter stage for packaging theLSI. There are a few manufacturers that specialize in the latter stagebut can cover the former stage. Manufacture of a conventional waferlevel chip size package (WLCSP) requires a process of performingrewiring, post electrode plating, etc. on a wafer; that is, requiresfacilities similar to those used in the former stage, and cannot beperformed by use of only conventional facilities for the latter stage.Therefore, it has not been easy to provide bump electrodes for externalconnection at positions different from those of the tip ends of postelectrodes exposed to the surface of an insulation layer.

PRIOR ART DOCUMENTS Patent Documents

-   Patent Document 1: Japanese Patent Application Laid-Open (kokai) No.    2005-136187-   Patent Document 2: Japanese Patent Application Laid-Open (kokai) No.    2006-210758

Non-Patent Document

-   Non-patent Document 1:    http://www.casio-micronics.co.jp/product/w_csp.html, home page of    Casio Micronics Co., Ltd. “W-CSP”

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

The present invention has been accomplished so as to solve theabove-described problems. An object of the present invention is toprovide a chip-size double side connection package which allows otherpackages having similar structures to be freely combined and disposedabove and below the chip-size double side electrode package, and whichcan be manufactured in such a manner that processes which requirefacilities similar to those used in the former stage are put togetheroff line in the form of a component. Thus, manufacturers dedicated forthe latter stage can enter into manufacture of such packages withoutlarge investment, and can readily cope with a future market expansion.

Another object of the present invention is to enable, by simple means,provision of external electrodes at positions different from those ofthe tip ends of post electrodes.

Means for Solving the Problems

A chip-size double side connection package and a method formanufacturing the same according to the present invention have thefollowing features. A semiconductor chip including a semiconductorsubstrate on which an LSI region and electrode connection regions areformed is connected to wiring for external connection provided on afirst main face and to wiring for external connection provided on asecond main face, the first and second main faces being located aboveand below the semiconductor chip, respectively. A wiring-added postelectrode component is formed such that it includes not only postelectrodes supported by a support portion but also front face wiringtraces connected to the post electrodes. Holes corresponding to throughelectrodes are formed in the semiconductor substrate at the centers ofthe electrode connection regions or in the vicinity thereof. A lowresistance metal is charged into each of the holes to thereby form thethrough electrodes. The plurality of post electrodes of the wiring-addedpost electrode component, which are coupled together by the supportportion, are simultaneously fixed to and electrically connected to uppersurface regions of the through electrodes or the electrode connectionregions. On the first main face side, after resin is charged into aspace between the semiconductor chip and the support portion, thesupport portion is separated so as to expose the front face wiringtraces. On the second main face side, the semiconductor substrate isgrounded so as to expose tip ends of the through electrodes. The frontface wiring traces exposed to the first main face side and the tip endsof the through electrodes exposed to the second main face side are usedas wiring for external connection.

External electrodes for external connection may be formed on the frontface wiring traces so as to be connected thereto. Further, on the secondmain face side, a back face insulation layer may be applied to theground semiconductor substrate such that the tip ends of the throughelectrodes are exposed, and external electrodes to be connected to thetip ends of the through electrodes may be formed.

Effect of the Invention

According to the present invention, for manufacture of a double sideelectrode package, which allows other packages having similar structuresto be freely combined and disposed above and below the package,processes which require facilities similar to those used in the formerstage can be put together off line in the form of a component.

Furthermore, according to the present invention, since the package has ashape similar to a bear chip, and opposite sides of the package can becovered with insulation layers, inspection can be performed thoroughly.In addition, it becomes easier to perform three-dimensional stackingafter inspecting the chip-size packages thoroughly so as to confirm thateach package is non-defective.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(A) to 1(C) are views showing a completed LSI wafer, wherein FIG.1(A) shows a single wafer on which a plurality of chips are formed in amatrix pattern, FIG. 1(B) is an elongated LSI chip perspective viewshowing one chip extracted from FIG. 1(A), and FIG. 1(C) is across-sectional view taken along line X-X′.

FIG. 2 is a view for describing a step of forming openings for throughelectrodes.

FIG. 3 is a view for describing charging of a low resistance metal.

FIGS. 4(A) to 4(C) are views showing the details of a wiring-added postelectrode component in which post electrodes with wiring are connectedtogether by means of a plate-shaped support portion, wherein FIGS. 4(A)and 4(B) show a side cross-sectional view and a perspective view,respectively, of a unit structure for a single package, and FIG. 4(C) isa perspective view of a structure in which a plurality of unitstructures are connected together.

FIG. 5 is a view exemplifying a wiring-added post electrode componentand an LSI chip in a state before they are connected together.

FIG. 6 is a view showing the wiring-added post electrode component andthe LSI chip in a state in which the post electrode component isconnected and fixed to the LSI chip, and resin-sealed.

FIG. 7 is a view for describing grinding of a silicon substrate.

FIG. 8 is a view for describing application of a back face insulationlayer.

FIG. 9 is a view showing a state after separation of a support portion(electroforming mother die).

FIG. 10 is a view showing a chip-size double side connection packagehaving bump electrodes formed thereon.

FIG. 11 is a view for describing formation of back face wiring(re-wiring) connected to the exposed ends of through electrodes.

FIG. 12 is a view showing a state after separation of a support portion(electroforming mother die).

FIG. 13 is a view showing a chip-size double side connection packagehaving bump electrodes formed thereon.

FIG. 14(A) is a perspective view showing a plurality of wiring-addedpost electrode components connected together, and FIG. 14(B) is across-sectional view taken along line X-X′ in FIG. 14(A).

FIG. 15 is a view exemplifying a chip-size double side connectionpackage according to a third embodiment.

FIG. 16 is a view showing a conventional double side electrode package.

FIG. 17 is a set of process charts showing a method of manufacturing anelectroformed component by use of photoresist.

MODE FOR CARRYING OUT THE INVENTION

The present invention will now be described by way of example. Achip-size double side connection package according to a first embodimentof the present invention will be described in the order of itsmanufacturing steps with reference to FIGS. 1 to 10. FIGS. 1(A) to 1(C)are views showing a completed LSI wafer, wherein FIG. 1(A) shows asingle wafer on which a plurality of chips are formed in a matrixpattern, FIG. 1(B) is an enlarged LSI chip perspective view showing asingle chip extracted from FIG. 1(A), and FIG. 1(C) is a cross-sectionalview taken along line X-X′. The LSI chip shown in FIGS. 1(B) and 1(C) isformed on a semiconductor (e.g., silicon) substrate by use of anordinary semiconductor process technique. An LSI region including anactive region and a wring region is formed on the upper surface of thesilicon substrate, and a plurality of bonding pad regions to beconnected to the LSI region are formed around the LSI region. Both oreither of a through electrode and a post electrode to be described lateris connected to each of the plurality of bonding pad regions (electrodeconnection portions). Notably, in the present specification, as shown inFIG. 1(C), the side of the LSI chip on which the silicon substrate ispresent will be referred to as the “rear face,” and the side of the LSIchip on which the LSI region is present will be referred to as the“front face.” Notably, an example in which, as will be described later,post electrodes are connected to upper surface regions of throughelectrodes electrically connected to the bonding pad regions isillustrated and described. However, the post electrodes can be connectedsimultaneously not only to the upper surface regions of the throughelectrodes but also the bonding pad regions by means of solderconnection (e.g., solder reflow).

FIG. 2 is a view for describing a step of forming openings for throughelectrodes. At the center of each bonding pad region or in the vicinitythereof, a hole corresponding to a through electrode to be describedlater is formed to extend through the bonding pad region into thesilicon substrate. For example, this hole has a diameter of aboutseveral μm to 30 μm, and a depth of about 5 to 50 μm. A low resistancemetal is charged into the hole to thereby form the through electrode.However, before this, an insulation film is formed on the wall surfaceof each hole of the silicon substrate. Although the insulation film maybe formed through thermal oxidation, it is desired to be formed throughdeposition at low temperature. Therefore, in the latter case, a nitridefilm is used as the insulation film. Such a nitride film is formedthrough deposition of a species produced as a result of a contactdecomposing reaction of a source material on a heated catalyst (seePatent Document 2).

FIG. 3 is a view for describing charging of a low resistance metal.Charging of a low resistance (electrically conductive metal) may beperformed through plating. Alternatively, charging of such a lowresistance metal may be performed by use of nanoparticles of metal(copper, silver, gold, etc.) and an ink jet method practically used inthe field of printers. Thus, the low resistance charged metal (throughelectrode) is electrically connected to the corresponding bonding padregion as well.

Next, manufacture of a wiring-added post electrode component will bedescribed with reference to FIGS. 4(A) to 4(C). FIGS. 4(A) to 4(C) areviews showing the details of a wiring-added post electrode component inwhich post electrodes with wiring are connected together by means of aplate-shaped support portion, wherein FIGS. 4(A) and 4(B) show a sidecross-sectional view and a perspective view, respectively, of a unitstructure for a single package, and FIG. 4(C) shows a perspective viewof a structure in which a plurality of unit structures for a pluralityof packages are connected together. Not only the post electrodessupported by the support portion but also wiring connected thereto isformed through electroforming.

The unit structure and the structure in which a plurality of unitstructures are connected together are configured such that a pluralityof post electrodes and wiring traces are connected together by a supportportion on the back side. The shape of the post electrodes is notlimited to the illustrated circular columnar shape, and the postelectrodes may have any of other columnar (bar-like) shapes such as arectangular columnar shape and a polygonal columnar shape. The wiringtraces and the post electrodes are fabricated through electroforming.

Electroforming itself is well known. Electroforming is a “method ofmanufacturing, repairing, or replicating a metal product throughelectroplating,” and is basically the same as electroplating. However,electroforming differs from electroplating in plating thickness, andalso differs from electroplating in that an operation of separating aplating film is performed. Further, when a plating film is separatedfrom a mother die and used, control and management of the physicalproperties of the plating film are important. A material includingnickel, copper, a nickel alloy, or a copper alloy may be used in thepresent invention as a plating metal (conductive material) to bedeposited by electroforming. Stainless steel, which is generally used asan electrically conductive material, may be used as the material of themother die used in the present invention. Alternatively, the mother diemay be formed of a silicon substrate which serves as a base and whosesurface is covered with a thin oxide film or the like which allowspassage of electricity for plating therethrough and which facilitatesseparation of a plating pattern. The composition of a plating bath andplating conditions must be selected such that no internal stress isproduced. In the case of nickel plating, nickel sulfamate bath is usedas a plating bath.

FIG. 17 is a set of process charts showing a method of manufacturing anelectroformed component by use of photoresist. Although electroformingwill be described below, the manufacturing steps shown in the processcharts can be applied to plating (see FIG. 14). In the case of plating(electroless plating), in place of a conductor such stainless steel, aninsulating member is used as a mother die, whereby the insulating membercan be used as a protection film of a semiconductor device without beingremoved.

Electroforming is performed as follows. As shown in FIG. 17( a),photoresist (non-conductive film) is applied to an upper surface of amother die of, for example, stainless steel. Subsequently, thephotoresist is exposed to light through a pattern film to thereby form apattern, followed by development, whereby an original plate forelectroforming is formed (FIG. 17( b)). In the case of a chip-sizedouble side connection package, the photoresist pattern of the originalplate for electroforming has a thickness greater than that of a product(post electrodes or wiring traces). In the case of the post electrodes,the photoresist pattern has a thickness greater than the thickness of anIC chip; for example, a thickness of about 50 μm to 300 μm.Subsequently, a plating metal is deposited in opening portions of thephotoresist pattern (FIG. 17( c)). An anode and a cathode are placed ina plating bath (e.g., nickel sulfamate solution) maintained at a propertemperature. The anode is formed of an electroforming metal to bedeposited through electroforming. The cathode is an electroformingmother die of, for example, stainless steel. As shown in FIG. 17( c), aphotoresist pattern is previously formed on the surface of theelectroforming mother die serving as the cathode. When a current iscaused to flow between the anode and the cathode, the electroformingmetal of the anode melts, and is plated in the opening portions of thephotoresist pattern on the electroforming mother die.

Next, as shown in FIG. 17( d), flattening machining is performed.Subsequently, the resist is removed (FIG. 17( e)), whereby the platingmetal forms wiring traces or post electrodes. The wiring traces formedby the plating metal are then separated from the electroforming motherdie (FIG. 17( f)). The feature of electroforming resides in thatseparation of the formed wiring traces and support portion can bereadily performed by means of heat and pressure.

For manufacture of a wiring-added post electrode component illustratedin FIGS. 4(A) to 4(C), the steps shown in FIG. 17( a) to FIG. 17( d) arerepeated two times. In the first step, wiring traces are formed on thesupport portion, and, in the second step, post electrodes to beconnected to the wiring traces are formed.

As described above, in the manufacture of the wiring-added postelectrode component, columnar post electrodes with wiring is grown on anelectrically conductive material (ectroforming mother die), which is asupport portion, by use of lithography and plating, whereby wiring-addedpost electrodes integrated with the support portion are formed. Afterthat, the wiring-added post electrode component shown in FIGS. 4(A) to4(C) is connected and fixed to the LSI chip shown in FIG. 3.

FIG. 5 is a view exemplifying a wiring-added post electrode componentand an LSI chip in a state before they are connected together. Theplurality of post electrodes of the wiring-added post electrodecomponent are simultaneously fixed to and electrically connected toupper surface regions of the through electrodes formed in the LSI chipor the bonding pad regions. With this procedure, the wiring-added postelectrode component is coupled to the front face side of the LSI chip.The fixation and connection of the post electrodes may be performedthrough solder connection. The post electrodes are simultaneouslyconnected to the upper surface regions of the through electrodes or thebonding pad regions by means of performing solder connection (e.g.,solder reflow). In a state after the post electrodes are connected tothe upper surface regions of the through electrodes, all the postelectrodes and the front face wiring are coupled together by means ofthe plate-shaped support portion.

FIG. 6 is a view showing the wiring-added post electrode component andthe LSI chip in a state in which the post electrode component isconnected and fixed to the LSI chip, and resin-sealed. After thewiring-added post electrode component, in which post electrodes withwiring are coupled together by a support portion, is fixed to the LSIchip, the front face of the LSI chip is transfer-molded up to the lowersurface of the support portion (the above-described ectroforming motherdie); i.e., transfer mold is performed such that the space between theLSI chip and the support portion is filled with resin. Alternatively,the front face of the LSI chip is resin-sealed by use of liquid resin(the material is, for example, an epoxy resin).

FIG. 7 is a view for describing grinding of a silicon substrate. Theback face side of the silicon substrate is ground such that tip ends ofthe through electrodes are exposed to the outside. As a result of thegrinding, the thickness of the silicon substrate becomes about 25 μm.Even though the silicon substrate becomes thin as described above, thestrength of the overall wafer can be maintained because the wiring-addedpost electrode component fixed to the LSI chip increases the rigidity ofthe wafer. Thus, it is possible to prevent damage to the siliconsubstrate, such as cracking or breakage thereof, which damage wouldotherwise occur during handling of the silicon substrate.

FIG. 8 is a view for describing application of a back face insulationlayer. A back face insulation layer is formed on a silicon surface onthe back face side of the silicon substrate. At that time, for example,an insulating material (e.g., an epoxy material) is applied to thesilicon surface by an ink jet method, excluding areas corresponding tothe through electrodes. Alternatively, after the insulating material isapplied to the entire surface, holes are formed at positionscorresponding to the through electrodes, whereby the tip ends of thethrough electrodes are exposed. The thickness of the back faceinsulation layer is determined such that the back face insulation layercan provide at least electrical insulation.

FIG. 9 is a view showing a state after separation of the support portion(electroforming mother die). Through separation of the support portion,the plurality of post electrodes (and the front face wiring tracesconnected thereto) are electrically separated from one another. Thedevice in this state can be used as a completed chip-size double sideconnection package in which the exposed front face wiring traces and theexposed tip ends of the through electrodes can be used as wiring tracesfor external connection and electrodes for external connection on thefront face and the back face, respectively.

FIG. 10 is a view showing a chip-size double side connection packagehaving bump electrodes formed thereon. On the front face side, externalelectrodes for external connection (bump electrodes) are formed on thefront face wiring traces exposed through separation of the supportportion to be connected therewith. If necessary, a protection film (thematerial is, for example, solder resist) for protecting the uppersurfaces of the front face wiring traces may be formed. In such a case,holes are formed in the protection film, and external electrodes areformed there. On the back face side as well, holes are formed in theback face insulation layer at locations where external electrodes (bumpelectrodes) must be formed, and external electrodes are formed at suchlocations. After that, the wafer is diced so as to separate LSIs fromone another. Alternatively, the wafer may be diced before formation ofexternal electrodes. In manufacture of semiconductor devices, ingeneral, a semiconductor wafer having a wide area is prepared, thenundergoes various processes, and finally diced vertically andhorizontally to thereby form a large number of semiconductor elements(semiconductor chips). Thus, the chip-size double side connectionpackage is completed.

As described above, according to the present invention, processes forforming rewiring and post electrodes of a chip-size double sideconnection package can be put together in the form of a wiring-addedpost electrode component. A conventional wiring layer is formed on thesurface of an LSI chip. In contrast, according to the present invention,a wiring layer can be easily formed in a spacious region of the surfaceof a seal resin portion located outward of the post electrodes.

Next, a chip-size double side connection package according to a secondembodiment will be described with reference to FIGS. 11 to 13. After theback face insulation layer is applied to the back face of the siliconsubstrate excluding areas corresponding to the tip ends of the throughelectrodes as shown in FIG. 8, there are formed back face wiring traces(rewiring) to be connected to the exposed ends of the through electrodesas shown in FIG. 11. The back face wiring traces may be metal particlewiring traces formed by use of metal nanoparticles. The metal particlewiring traces are formed by means of directly patterning a wiring layer;i.e., applying metal nanoparticles by a direct depicting method such asan ink jet method or a screen printing method. A desired pattern isdepicted by means of applying organic solvent containing nanoparticlesof metal (copper, silver, gold, etc.) by an ink jet method practicallyused in the field of printers. After that, heat treatment is performedso as to evaporate the organic solvent. Alternatively, in the case ofthe screen printing method, nanoparticle paste prepared by adding metalnanoparticles to organic solvent is applied onto the back faceinsulation layer by the screen printing method, followed by heating andfiring, whereby circuit wiring can be formed. After this rewiringprocess performed through formation of metal particle wiring, a processfor lowering the resistance may be performed along with removal of thesolvent (see Patent Document 2).

FIG. 12 is a view showing a state after separation of the supportportion (electroforming mother die). As a result of separation of thesupport portion, the plurality of post electrodes (and the front facewiring traces connected thereto) are electrically separated from oneanother.

FIG. 13 is a view showing a chip-size double side connection packagehaving bump electrodes formed thereon. The device in a state shown inFIG. 12 can be used as a completed chip-size double side connectionpackage. However, on the front face side, as in the case described withreference to FIG. 10, external electrodes for external connection (bumpelectrodes) may be formed on the wiring traces, exposed throughseparation of the support portion, to be connected therewith. On theback face, external electrodes (bump electrodes) are formed such thatthey are connected to the back face wiring traces. If necessary, on thefront face or the back face, there may be formed a protection film(formed through application of insulation film or solder resist) forprotecting the upper surfaces of the wiring traces. In such a case,holes are formed in the protection film, and external electrodes areformed there.

FIGS. 14(A) and 14(B) are views showing a wiring-added post electrodecomponent different from that shown in FIGS. 4(A) to 4(C). FIG. 14(A) isa perspective view showing a plurality of s connected together, and FIG.14(B) is a cross-sectional view taken along line X-X′ in FIG. 14(A).

Stainless steel (SUS) may be used for the support portion of thewiring-added post electrode component. However, in the case wherestainless steel is used, difference in coefficient of thermal expansionbetween the support portion and the silicon substrate may cause apositional shift between post electrode connection positions on thewafer and the positions of the post electrodes supported by thestainless steel. In this case, desirably, a silicon substrate which isequal in thermal expansion to the above-mentioned silicon substrate or aglass substrate which is low in coefficient of thermal expansion isused.

In the case of the illustrated support portion, a tape formed from aninsulation material in the form of a thin film, whose typical example ispolyimide tape, is applied to the entirety of one face of the supportportion. The support portion and the tape are separated from each otherin a later step. Therefore, a treatment is performed in advance whichtreatment facilitates separation between the support portion and thetape upon application of, for example, a temperature higher than reflowtemperature (equal to or higher than mold temperature). For example,adhesive containing thermal capsules is used. Alternatively, the supportportion is formed of a light transmissible material (e.g., heatresistance glass which is low in thermal expansion), and anultraviolet-ray-separation-type adhesive is used. Alternatively, athermoplastic adhesive may be used.

Moreover, a metal seed layer which will become wiring traces is formedon this tape, whereby a metal-clad tape is formed. The seed layer may beformed of foil of gold, silver, copper, or palladium, which can becopper-plated. The wiring traces are formed through a process in whichresist is applied to the seed layer, patterning is performed throughexposure and development, etching is performed, and the resist isremoved. A wiring layer is grown on this seed layer through plating.Furthermore, for formation of the post electrodes, application of resistand development are carried out thereon, and post portions are grownthrough plating. Alternatively, the wiring traces may be formed by meansof directly patterning the seed layer by use of metal nanoparticles. Inthis case, the lithography step can be omitted (see the above-describedmeal particle wiring). Alternatively, it is possible to apply acopper-foil-clad tape, and form wiring traces through etching.Furthermore, for formation of the post electrodes, application of resistand development are carried out thereon, and post portions are grownthrough plating. Thus, the wiring-added post electrode component iscompleted.

FIG. 15 is a view exemplifying a chip-size double side connectionpackage according to a third embodiment. FIG. 15 corresponds to FIG. 10and shows a chip-size double side connection package which can beobtained through addition of a protection film (thin film) to thechip-size double side connection package illustrated in FIG. 10. Thewiring-added post electrode component illustrated in FIGS. 14(A) and14(B) is connected and fixed to the LSI chip as in the above-describedcase. After that, for separation of the support portion, a predeterminedhigh temperature is applied such that only the support portion isseparated and the insulation tape of thin film remains. The exposedinsulation tape functions as a protection film of a completed product.After that, on the front face side, holes are formed in the protectionfilm, and external electrodes are formed to be connected to the frontface wiring traces exposed through formation of the holes. Thus, thechip-size double side connection package according to the thirdembodiment is completed. Similarly, the wiring-added post electrodecomponent illustrated in FIGS. 14(A) and 14(B) may be applied to thechip-size double side connection package according to the secondembodiment (see FIGS. 11 to 13), whereby the chip-size double sideconnection package according to the second embodiment can have a thinfilm functioning as a protection film.

Although only some exemplary embodiments of the present invention havebeen described in detail above, many modifications are possible in theexemplary embodiments without materially departing from the novelteachings and advantageous effects of the present invention.

1. A chip-size double side connection package configured such that asemiconductor chip including a semiconductor substrate on which an LSIregion and electrode connection regions are formed is connected towiring for external connection provided on a first main face and towiring for external connection provided on a second main face, the firstand second main faces being located above and below the semiconductorchip, respectively, the chip-size double side connection packagecomprising: a low resistance metal charged into holes formed in theelectrode connection regions to form through electrodes; a wiring-addedpost electrode component which includes post electrodes and front facewiring traces connected to the post electrodes fixed to and electricallyconnected to upper surface regions of the through electrodes or theelectrode connection regions; a resin between the semiconductor chip andthe front face wiring traces; and tip ends on the second main face ofthe through electrodes configured for use as the wiring for externalconnection.
 2. The chip-size double side connection package according toclaim 1, wherein external electrodes for external connection are formedon the front face wiring traces so as to be connected thereto. 3.(canceled)
 4. The chip-size double side connection package according toclaim 1, wherein, on the second main face side, a back face insulationlayer is applied to the semiconductor substrate such that the tip endsof the through electrodes are exposed, and back face wiring traces to beconnected to the tip ends of the through electrodes are formed.
 5. Thechip-size double side connection package according to claim 4, wherein,on the second main face side, external electrodes to be connected to theback face wiring traces are formed.
 6. The chip-size double sideconnection package according to claim 1, wherein, after the holescorresponding to the through electrodes are formed in the semiconductorsubstrate, an insulation film is deposited on the wall surfaces of theholes. 7-9. (canceled)
 10. A method for manufacturing a chip-size doubleside connection package configured such that a semiconductor chipincluding a semiconductor substrate on which an LSI region and electrodeconnection regions are formed is connected to wiring for externalconnection provided on a first main face and to wiring for externalconnection provided on a second main face, the first and second mainfaces being located above and below the semiconductor chip,respectively, the method being characterized by comprising: forming awiring-added post electrode component which includes post electrodessupported by a support portion and front face wiring traces connected tothe post electrodes; forming holes corresponding to through electrodesin the semiconductor substrate at or in the vicinity of the centers ofthe electrode connection regions to which the through electrodes are tobe connected; charging a low resistance metal into the holes to therebyform the through electrodes; simultaneously fixing and electricallyconnecting the plurality of post electrodes of the wiring-added postelectrode component, which are coupled together by the support portion,to upper surface regions of the through electrodes or the electrodeconnection regions; on the first main face side, charging resin into aspace between the semiconductor chip and the support portion, and thenseparating the support portion so as to expose the front face wiringtraces; and on the second main face side, grinding the semiconductorsubstrate to form a ground semiconductor substrate so as to expose tipends of the through electrodes, wherein the front face wiring tracesexposed to the first main face side and the tip ends of the throughelectrodes exposed to the second main face side are used as the wiringfor external connection.
 11. The method for manufacturing the chip-sizedouble side connection package according to claim 10, wherein externalelectrodes for external connection are formed on the front face wiringtraces so as to be connected thereto.
 12. The method for manufacturingthe chip-size double side connection package according to claim 10,wherein, on the second main face side, a back face insulation layer isapplied to the ground semiconductor substrate such that the tip ends ofthe through electrodes are exposed, and external electrodes to beconnected to the tip ends of the through electrodes are formed.
 13. Themethod for manufacturing the chip-size double side connection packageaccording to claim 10, wherein, on the second main face side, a backface insulation layer is applied to the ground semiconductor substratesuch that the tip ends of the through electrodes are exposed, and backface wiring traces to be connected to the tip ends of the throughelectrodes are formed.
 14. The method for manufacturing the chip-sizedouble side connection package according to claim 13, wherein, on thesecond main face side, external electrodes to be connected to the backface wiring traces are formed.
 15. The method for manufacturing thechip-size double side connection package according to claim 10, wherein,after the holes corresponding to the through electrodes are formed inthe semiconductor substrate, an insulation film is deposited on the wallsurfaces of the holes.
 16. The method for manufacturing the chip-sizedouble side connection package according to claim 10, wherein thewiring-added post electrode component is fabricated such that columnarpost electrodes with wiring are grown on an electrically conductivematerial, which serves as the support portion, to thereby formwiring-added post electrodes integrated with the support portion. 17.The method for manufacturing the chip-size double side connectionpackage according to claim 10, wherein the wiring-added post electrodecomponent is fabricated such that columnar post electrodes with wiringare grown on an insulation tape of thin film applied to one entiresurface of the support portion, to thereby form wiring-added postelectrodes integrated with the support portion.
 18. The method formanufacturing the chip-size double side connection package according toclaim 17, wherein, on the first main face side, the insulation tape leftafter separation of the support portion is used as a protection film.19. (canceled)